FDB8832_F085 Fairchild Semiconductor
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Technische Details FDB8832_F085 Fairchild Semiconductor
Description: MOSFET N-CH 30V 34A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Ta), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote FDB8832_F085
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FDB8832_F085 | Hersteller : Fairchild Semiconductor |
 Description: MOSFET N-CH 30V 34A D2PAK |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB8832-F085 | Hersteller : ON Semiconductor / Fairchild |
MOSFET 30V N-CHAN PwrTrench |
auf Bestellung 375 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB8832_F085 | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 30V 34A D2PAK |
Produkt ist nicht verfügbar |
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FDB8832-F085 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 34A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Ta) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 15 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |