FDB8870 Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 30V 23A/160A TO263AB
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Packaging: Bulk
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
| Anzahl | Preis |
|---|---|
| 270+ | 1.87 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDB8870 Fairchild Semiconductor
Description: MOSFET N-CH 30V 23A/160A TO263AB, Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V, Packaging: Bulk, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 160W (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 35A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 160A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB.
Weitere Produktangebote FDB8870 nach Preis ab 1.56 EUR bis 3.59 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDB8870 | onsemi |
Description: MOSFET N-CH 30V 23A/160A TO263AB Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 160A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 35A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V |
auf Bestellung 55520 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
FDB8870 | onsemi / Fairchild |
MOSFET 30V N-Channel PowerTrench |
auf Bestellung 223 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| FDB8870 | fairchild |
to-263/d2-pak |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDB8870 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 23A/160A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Description: MOSFET N-CH 30V 23A/160A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
auf Bestellung 55520 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 270+ | 1.87 EUR |
| FDB8870 |
|
Hersteller: onsemi / Fairchild
MOSFET 30V N-Channel PowerTrench
MOSFET 30V N-Channel PowerTrench
auf Bestellung 223 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 3.59 EUR |
| 10+ | 2.97 EUR |
| 100+ | 2.38 EUR |
| 250+ | 2.2 EUR |
| 500+ | 1.99 EUR |
| 800+ | 1.69 EUR |
| 2400+ | 1.56 EUR |
| FDB8870 |
|
Hersteller: fairchild
to-263/d2-pak
to-263/d2-pak
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH