FDC6304P ON Semiconductor
auf Bestellung 76937 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1523+ | 0.36 EUR |
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Technische Details FDC6304P ON Semiconductor
Description: MOSFET 2P-CH 25V 0.46A SSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 460mA, Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V, Rds On (Max) @ Id, Vgs: 1.1Ohm @ 500mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SuperSOT™-6.
Weitere Produktangebote FDC6304P nach Preis ab 0.45 EUR bis 0.45 EUR
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FDC6304P | Hersteller : Fairchild Semiconductor |
 Description: MOSFET 2P-CH 25V 0.46A SSOT6Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 460mA Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V Rds On (Max) @ Id, Vgs: 1.1Ohm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 |
auf Bestellung 75695 Stücke: Lieferzeit 10-14 Tag (e) |
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FDC6304P | Hersteller : ON Semiconductor / Fairchild |
MOSFET SSOT-6 P-CH -25V |
auf Bestellung 11432 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDC6304P |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC6304P | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 25V 0.46A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
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FDC6304P | Hersteller : onsemi |
Description: MOSFET 2P-CH 25V 0.46A SSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 460mA Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V Rds On (Max) @ Id, Vgs: 1.1Ohm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 |
Produkt ist nicht verfügbar |