FDD10AN06A0_F085 Fairchild Semiconductor
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Technische Details FDD10AN06A0_F085 Fairchild Semiconductor
Description: MOSFET N-CH 60V 11A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V, Power Dissipation (Max): 135W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote FDD10AN06A0_F085
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FDD10AN06A0_F085 | Hersteller : Fairchild Semiconductor |
 Description: MOSFET N-CH 60V 11A D-PAK |
auf Bestellung 955 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD10AN06A0-F085 | Hersteller : ON Semiconductor / Fairchild |
MOSFET 60V, 50A, 10.5mOhm Power Trench MOSFET |
auf Bestellung 6044 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD10AN06A0-F085 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 11A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FDD10AN06A0_F085 | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 60V 11A D-PAK |
Produkt ist nicht verfügbar |
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FDD10AN06A0-F085 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 11A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FDD10AN06A0-F085 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 11A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |