FDD6676AS UMW

Description: MOSFET N-CH 30V 90A TO252, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 70W (Ta), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 90A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk.