FDD6796A Fairchild Semiconductor

Description: MOSFET N-CH 25V 20A/40A TO252, Power Dissipation (Max): 3.7W (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 13 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Supplier Device Package: TO-252, (D-Pak), Vgs(th) (Max) @ Id: 3V @ 250µA.