FDD8453LZ-F085 onsemi / Fairchild
| Anzahl | Preis |
|---|---|
| 2+ | 2.38 EUR |
| 10+ | 1.95 EUR |
| 100+ | 1.51 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 1.04 EUR |
| 2500+ | 1 EUR |
| 5000+ | 0.96 EUR |
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Produktbewertung abgeben
Technische Details FDD8453LZ-F085 onsemi / Fairchild
Description: MOSFET N-CH 40V 50A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, Power Dissipation (Max): 118W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3515 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote FDD8453LZ-F085 nach Preis ab 1.03 EUR bis 3.26 EUR
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FDD8453LZ-F085 | onsemi |
 Description: MOSFET N-CH 40V 50A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V Power Dissipation (Max): 118W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3515 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 1946 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD8453LZ_F085 | Fairchild Semiconductor |
Description: MOSFET N-CH 40V 50A DPAK |
auf Bestellung 2447 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDD8453LZ-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3515 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3515 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 1946 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.26 EUR |
| 10+ | 2.09 EUR |
| 100+ | 1.41 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1.03 EUR |
| FDD8453LZ_F085 |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 40V 50A DPAK
Description: MOSFET N-CH 40V 50A DPAK
auf Bestellung 2447 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH