FDD850N10LD ON Semiconductor / Fairchild
auf Bestellung 2463 Stücke:
Lieferzeit 14-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details FDD850N10LD ON Semiconductor / Fairchild
Description: MOSFET N-CH 100V 15.3A TO252-4, Packaging: Bulk, Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.3A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 12A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252-4, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V.
Weitere Produktangebote FDD850N10LD
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
FDD850N10LD | Hersteller : ON Semiconductor | Trans MOSFET N-CH 100V 15.3A 5-Pin(4+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
||
FDD850N10LD | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 100V 15.3A TO252-4 Packaging: Bulk Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.3A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 12A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252-4 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V |
Produkt ist nicht verfügbar |