FDD8770 Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 35A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 13 V
auf Bestellung 90725 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 742+ | 0.95 EUR |
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Technische Details FDD8770 Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 3, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 35A, 10V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 13 V.
Weitere Produktangebote FDD8770 nach Preis ab 4.94 EUR bis 6.79 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| FDD8770 | Hersteller : fairchild |
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auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD8770 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 25V 35A 3-Pin(2+Tab) DPAK T/R |
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| FDD8770 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 210A; Idm: 407A; 115W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 25V Drain current: 210A Pulsed drain current: 407A Power dissipation: 115W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: SMD Gate charge: 73nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDD8770 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 210A; Idm: 407A; 115W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 25V Drain current: 210A Pulsed drain current: 407A Power dissipation: 115W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: SMD Gate charge: 73nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |