FDD8770 Fairchild Semiconductor

Description: POWER FIELD-EFFECT TRANSISTOR, 3, Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 13 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 115W (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 35A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk.