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FDD8874

FDD8874 UMW

32915c46dba1b0dadbe060ceb33a5f1b.pdf
Hersteller: UMW
Description: MOSFET N-CH 30V 116A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 35A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V
auf Bestellung 1054 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
23+0.77 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDD8874 UMW

Description: MOSFET N-CH 30V 116A D-PAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 116A (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 35A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V.

Weitere Produktangebote FDD8874 nach Preis ab 1.78 EUR bis 1.78 EUR

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FDD8874 FDD8874 Fairchild Semiconductor FAIR-S-A0002366331-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 3
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 116A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
auf Bestellung 256 Stücke:
Lieferzeit 10-14 Tag (e)
256+1.78 EUR
Mindestbestellmenge: 256
Im Einkaufswagen  Stück im Wert von  UAH
FDD8874 FAIRCHILD FDD%2CFDU8874.pdf 32915c46dba1b0dadbe060ceb33a5f1b.pdf FAIR-S-A0002366331-1.pdf?t.download=true&u=5oefqw 07+ TO-252
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FDD8874 FAIR-S-A0002366331-1.pdf?t.download=true&u=5oefqw
FDD8874
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 3
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 116A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
auf Bestellung 256 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
256+1.78 EUR
Mindestbestellmenge: 256
Im Einkaufswagen  Stück im Wert von  UAH
FDD8874 FDD%2CFDU8874.pdf 32915c46dba1b0dadbe060ceb33a5f1b.pdf FAIR-S-A0002366331-1.pdf?t.download=true&u=5oefqw
Hersteller: FAIRCHILD
07+ TO-252
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH