FDG314P Fairchild Semiconductor

Description: MOSFET P-CH 25V 650MA SC88, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Supplier Device Package: SC-88 (SC-70-6), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 750mW (Ta), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 500mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 63 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V.