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FDH038AN08A1

FDH038AN08A1 Fairchild Semiconductor

FAIRS45999-1.pdf?t.download=true&u=5oefqw
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 75V 22A/80A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 8665 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 450W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
auf Bestellung 4541 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+10.77 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDH038AN08A1 Fairchild Semiconductor

Description: MOSFET N-CH 75V 22A/80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V, Power Dissipation (Max): 450W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8665 pF @ 25 V.

Weitere Produktangebote FDH038AN08A1 nach Preis ab 9.87 EUR bis 18.83 EUR

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FDH038AN08A1 FDH038AN08A1 onsemi / Fairchild FDH038AN08A1_D-1807432.pdf MOSFETs N-Ch PowerTrench
auf Bestellung 312 Stücke:
Lieferzeit 10-14 Tag (e)
1+12.09 EUR
10+10.63 EUR
450+9.94 EUR
900+9.91 EUR
2700+9.87 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDH038AN08A1 FDH038AN08A1 onsemi fdh038an08a1-d.pdf Description: MOSFET N-CH 75V 22A/80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8665 pF @ 25 V
auf Bestellung 432 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.83 EUR
10+13.05 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDH038AN08A1 FDH038AN08A1_D-1807432.pdf
FDH038AN08A1
Hersteller: onsemi / Fairchild
MOSFETs N-Ch PowerTrench
auf Bestellung 312 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+12.09 EUR
10+10.63 EUR
450+9.94 EUR
900+9.91 EUR
2700+9.87 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDH038AN08A1 fdh038an08a1-d.pdf
FDH038AN08A1
Hersteller: onsemi
Description: MOSFET N-CH 75V 22A/80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8665 pF @ 25 V
auf Bestellung 432 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.83 EUR
10+13.05 EUR
Im Einkaufswagen  Stück im Wert von  UAH