Weitere Produktangebote FDMC8676 nach Preis ab 1.36 EUR bis 1.95 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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FDMC8676 | Fairchild Semiconductor |
 Description: MOSFET N-CH 30V 16A/18A POWER33Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 14.7A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Bulk |
auf Bestellung 4037 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC8676 | ON Semiconductor |
Trans MOSFET N-CH Si 30V 16A 8-Pin Power 33 T/R |
auf Bestellung 2063 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC8676 | ON Semiconductor |
Trans MOSFET N-CH Si 30V 16A 8-Pin Power 33 T/R |
auf Bestellung 1974 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC8676 | ON Semiconductor |
Trans MOSFET N-CH Si 30V 16A 8-Pin Power 33 T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMC8676 |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 30V 16A/18A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 14.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Description: MOSFET N-CH 30V 16A/18A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 14.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
auf Bestellung 4037 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 398+ | 1.57 EUR |
| FDMC8676 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 30V 16A 8-Pin Power 33 T/R
Trans MOSFET N-CH Si 30V 16A 8-Pin Power 33 T/R
auf Bestellung 2063 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 339+ | 1.95 EUR |
| 500+ | 1.73 EUR |
| 1000+ | 1.56 EUR |
| FDMC8676 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 30V 16A 8-Pin Power 33 T/R
Trans MOSFET N-CH Si 30V 16A 8-Pin Power 33 T/R
auf Bestellung 1974 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 339+ | 1.95 EUR |
| 500+ | 1.73 EUR |
| 1000+ | 1.56 EUR |
| FDMC8676 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 30V 16A 8-Pin Power 33 T/R
Trans MOSFET N-CH Si 30V 16A 8-Pin Power 33 T/R
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 339+ | 1.95 EUR |
| 500+ | 1.73 EUR |
| 1000+ | 1.56 EUR |
| 10000+ | 1.36 EUR |