FDME430NT

FDME430NT Fairchild Semiconductor


FAIRS45500-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 30V 6A MICROFET
Packaging: Bulk
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
auf Bestellung 21155 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1268+0.39 EUR
Mindestbestellmenge: 1268
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details FDME430NT Fairchild Semiconductor

Description: MOSFET N-CH 30V 6A MICROFET, Packaging: Bulk, Package / Case: 6-PowerUFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: MicroFet 1.6x1.6 Thin, Part Status: Active, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V.

Weitere Produktangebote FDME430NT

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FDME430NT FDME430NT Hersteller : ON Semiconductor / Fairchild FDME430NT-1119433.pdf MOSFET 30V N-Channel PowerTrench MOSFET
auf Bestellung 4980 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH