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FDMS0352S Fairchild Semiconductor

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Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6), Power56
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 15 V

auf Bestellung 259928 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis ohne MwSt
579+	0.84 EUR

Mindestbestellmenge: 579

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Technische Details FDMS0352S Fairchild Semiconductor

Description: POWER FIELD-EFFECT TRANSISTOR, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V, Power Dissipation (Max): 2.5W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Power56, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 15 V.

Weitere Produktangebote FDMS0352S

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis ohne MwSt
	FDMS0352S	Hersteller : ONSEMI	Description: ONSEMI - FDMS0352S - POWER FIELD-EFFECT TRANSISTOR tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023)	auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e)