FDMS3624S ON Semiconductor / Fairchild
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Technische Details FDMS3624S ON Semiconductor / Fairchild
Description: SMALL SIGNAL FIELD-EFFECT TRANSI, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W (Ta), 2.5W (Ta), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 30A (Tc), 30A (Ta), 60A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1570pF @13V, 4045pF @ 13V, Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V, 5mOhm @ 17.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, 59nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, 2.2V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active.
Weitere Produktangebote FDMS3624S
Foto | Bezeichnung | Hersteller | Beschreibung |
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FDMS3624S | Hersteller : Fairchild Semiconductor |
Description: SMALL SIGNAL FIELD-EFFECT TRANSI Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W (Ta), 2.5W (Ta) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 30A (Tc), 30A (Ta), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1570pF @13V, 4045pF @ 13V Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V, 5mOhm @ 17.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, 59nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA, 2.2V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Active |
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