FDMS7670 ON Semiconductor
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.74 EUR |
| 6000+ | 0.69 EUR |
| 9000+ | 0.65 EUR |
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Technische Details FDMS7670 ON Semiconductor
Description: MOSFET N-CH 30V 21A/42A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 42A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 21A, 10V, Power Dissipation (Max): 2.5W (Ta), 62W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4105 pF @ 15 V.
Weitere Produktangebote FDMS7670 nach Preis ab 0.80 EUR bis 2.46 EUR
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FDMS7670 | Hersteller : onsemi |
 Description: MOSFET N-CH 30V 21A/42A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 21A, 10V Power Dissipation (Max): 2.5W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4105 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS7670 | Hersteller : onsemi / Fairchild |
MOSFETs 30V 42A N-Channel PowerTrench |
auf Bestellung 7202 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS7670 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 21A/42A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 21A, 10V Power Dissipation (Max): 2.5W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4105 pF @ 15 V |
auf Bestellung 5149 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMS7670 | Hersteller : FAIRCHILD |
10+ POWER56 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDMS7670 | Hersteller : FSC |
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auf Bestellung 1600 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS7670 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 21A 8-Pin PQFN EP T/R |
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FDMS7670 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 21A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMS7670 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 62W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 42A Pulsed drain current: 150A Power dissipation: 62W Case: Power56 Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMS7670 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 62W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 42A Pulsed drain current: 150A Power dissipation: 62W Case: Power56 Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |