Produkte > FAIRCHILD SEMICONDUCTOR > FDP039N08B-F102

FDP039N08B-F102 Fairchild Semiconductor


ONSM-S-A0003584668-1.pdf?t.download=true&u=5oefqw
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 80V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 9450 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
auf Bestellung 399 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+8.51 EUR
Mindestbestellmenge: 67 Stücke
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Technische Details FDP039N08B-F102 Fairchild Semiconductor

Description: MOSFET N-CH 80V 120A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 9450 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 214W (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk.

Weitere Produktangebote FDP039N08B-F102 nach Preis ab 7.91 EUR bis 16.26 EUR

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FDP039N08B-F102 FDP039N08B-F102 onsemi / Fairchild FDP039N08B_D-2312865.pdf MOSFETs Hi Intg PWM contrlr Green-Mode
auf Bestellung 746 Stücke:
Lieferzeit 10-14 Tag (e)
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10+10.25 EUR
50+10.22 EUR
100+7.91 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDP039N08B-F102 FDP039N08B-F102 onsemi fdp039n08b-d.pdf Description: MOSFET N-CH 80V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 9450 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 418 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.26 EUR
10+11.11 EUR
100+8.2 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDP039N08B-F102 FDP039N08B_D-2312865.pdf
Hersteller: onsemi / Fairchild
MOSFETs Hi Intg PWM contrlr Green-Mode
auf Bestellung 746 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+14.39 EUR
10+10.25 EUR
50+10.22 EUR
100+7.91 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDP039N08B-F102 fdp039n08b-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 80V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 9450 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 418 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.26 EUR
10+11.11 EUR
100+8.2 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH