FDP14AN06LA0 Fairchild Semiconductor

Description: MOSFET N-CH 60V 10A/67A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 11.6mOhm @ 67A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 67A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.