FDP14AN06LA0 Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET N-CH 60V 10A/67A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 67A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
auf Bestellung 14481 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 109+ | 4.58 EUR |
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Technische Details FDP14AN06LA0 Fairchild Semiconductor
Description: MOSFET N-CH 60V 10A/67A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 67A (Tc), Rds On (Max) @ Id, Vgs: 11.6mOhm @ 67A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V.
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FDP14AN06LA0 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 10A/67A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 67A (Tc) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 67A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V |
Produkt ist nicht verfügbar |