FDP6670AL Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 15 V
| Anzahl | Preis |
|---|---|
| 503+ | 0.99 EUR |
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Technische Details FDP6670AL Fairchild Semiconductor
Description: MOSFET N-CH 30V 80A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -65°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 15 V.
Weitere Produktangebote FDP6670AL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| FDP6670AL | FAIRCHILD |
TO-220 |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDP6670AL |
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Hersteller: FAIRCHILD
TO-220
TO-220
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
