FDP8443

FDP8443 Fairchild Semiconductor


FAIRS25642-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 40V 20A/80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9310 pF @ 25 V
auf Bestellung 11973 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
226+2.16 EUR
Mindestbestellmenge: 226
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Technische Details FDP8443 Fairchild Semiconductor

Description: MOSFET N-CH 40V 20A/80A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9310 pF @ 25 V.

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FDP8443 Hersteller : ONSEMI FAIRS25642-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - FDP8443 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 12615 Stücke:
Lieferzeit 14-21 Tag (e)
FDP8443 FDP8443 Hersteller : onsemi / Fairchild FairchildSemiconductor_16132324363452-1191852.pdf MOSFET 40V N-Channel PowerTrench
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