FDS3601 Fairchild Semiconductor

Description: MOSFET 2N-CH 100V 1.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 1.3A, Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V, Rds On (Max) @ Id, Vgs: 480mOhm @ 1.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC.