FDS4070N3 Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 40V 15.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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Technische Details FDS4070N3 Fairchild Semiconductor
Description: MOSFET N-CH 40V 15.3A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: 8-SO FLMP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V.
Weitere Produktangebote FDS4070N3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| FDS4070N3 | FAIRCHILD |
SO-8 |
auf Bestellung 26000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDS4070N3 |
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Hersteller: FAIRCHILD
SO-8
SO-8
auf Bestellung 26000 Stücke:
Lieferzeit 21-28 Tag (e)

