FDSS2407_SB82086 Fairchild Semiconductor
| Anzahl | Preis |
|---|---|
| 279+ | 1.62 EUR |
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Technische Details FDSS2407_SB82086 Fairchild Semiconductor
Description: MOSFET 2N-CH 62V 3.3A 8SOIC, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.27W (Ta), Drain to Source Voltage (Vdss): 62V, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V, Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote FDSS2407_SB82086 nach Preis ab 1.66 EUR bis 1.66 EUR
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FDSS2407S_B82086 | Fairchild Semiconductor |
Description: MOSFET 2N-CH 62V 3.3A 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.27W (Ta) Drain to Source Voltage (Vdss): 62V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 783 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDSS2407S_B82086 |
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Hersteller: Fairchild Semiconductor
Description: MOSFET 2N-CH 62V 3.3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.27W (Ta)
Drain to Source Voltage (Vdss): 62V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 62V 3.3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.27W (Ta)
Drain to Source Voltage (Vdss): 62V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 783 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 271+ | 1.66 EUR |


