FDSS2407 Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET 2N-CH 62V 3.3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.27W
Drain to Source Voltage (Vdss): 62V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 457299 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 342+ | 1.43 EUR |
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Technische Details FDSS2407 Fairchild Semiconductor
Description: MOSFET 2N-CH 62V 3.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.27W, Drain to Source Voltage (Vdss): 62V, Current - Continuous Drain (Id) @ 25°C: 3.3A, Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V, Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote FDSS2407
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Description: ONSEMI - FDSS2407 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
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FDSS2407 Produktcode: 171191
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FDSS2407 | Hersteller : onsemi |
Description: MOSFET 2N-CH 62V 3.3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.27W Drain to Source Voltage (Vdss): 62V Current - Continuous Drain (Id) @ 25°C: 3.3A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FDSS2407 | Hersteller : onsemi |
Description: MOSFET 2N-CH 62V 3.3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.27W Drain to Source Voltage (Vdss): 62V Current - Continuous Drain (Id) @ 25°C: 3.3A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |