FDU6512A Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 20V 10.7A/36A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1082 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 386+ | 1.25 EUR |
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Technische Details FDU6512A Fairchild Semiconductor
Description: MOSFET N-CH 20V 10.7A/36A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 1082 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: I-PAK, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 43W (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 10.7A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 36A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Weitere Produktangebote FDU6512A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
FDU6512A | onsemi |
Description: MOSFET N-CH 20V 10.7A/36A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 10.7A, 4.5V Power Dissipation (Max): 3.8W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: I-PAK Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1082 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDU6512A |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 10.7A/36A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10.7A, 4.5V
Power Dissipation (Max): 3.8W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1082 pF @ 10 V
Description: MOSFET N-CH 20V 10.7A/36A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10.7A, 4.5V
Power Dissipation (Max): 3.8W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1082 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH