FDW258P Fairchild Semiconductor

Description: MOSFET P-CH 12V 9A 8TSSOP, Input Capacitance (Ciss) (Max) @ Vds: 5049 pF @ 5 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 1.3W (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 9A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Bulk.