FDZ209N Fairchild Semiconductor

Description: MOSFET N-CH 60V 4A 12BGA, Input Capacitance (Ciss) (Max) @ Vds: 657 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, Supplier Device Package: 12-BGA (2x2.5), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 5V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 12-WFBGA, Packaging: Bulk.