FDZ663P Fairchild Semiconductor

Description: FDZ663P - FDZ663P - MOSFET P-CHA, Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-XFBGA, WLCSP, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: 4-WLCSP (0.80x0.80), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 1.3W (Ta).