FGA20N120FTDTU

Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 40A TO-3P
Power - Max: 298 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
Gate Charge: 137 nC
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Reverse Recovery Time (trr): 447 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube

Hersteller: onsemi / Fairchild
IGBT Transistors 1200V N-Chan Trench

Hersteller: ONSEMI
Description: ONSEMI - FGA20N120FTDTU - IGBT, 40 A, 1.59 V, 298 W, 1.2 kV, TO-3P, 3 Pin(s)
SVHC: Lead (19-Jan-2021)

Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 40A 298mW 3-Pin(3+Tab) TO-3P Tube