FGA50T65SHD IGBT-транзистор
Produktcode: 223840
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Transistoren > Transistoren IGBT, Leistungsmodule
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Weitere Produktangebote FGA50T65SHD IGBT-транзистор nach Preis ab 3.67 EUR bis 10.6 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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FGA50T65SHD | ON Semiconductor |
 Trans IGBT Chip N-CH 650V 100A 319W 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 47150 Stücke: Lieferzeit 14-21 Tag (e) |
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FGA50T65SHD | onsemi |
Description: IGBT TRENCH FS 650V 100A TO-3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34.6 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22.4ns/73.6ns Switching Energy: 1.28mJ (on), 384µJ (off) Test Condition: 400V, 50A, 6Ohm, 15V Gate Charge: 87 nC Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 319 W |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
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| FGA50T65SHD |
|
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 650V 100A 319W 3-Pin(3+Tab) TO-3P Tube
Trans IGBT Chip N-CH 650V 100A 319W 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 47150 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 141+ | 4.63 EUR |
| 500+ | 4.33 EUR |
| 1000+ | 3.99 EUR |
| 10000+ | 3.67 EUR |
| FGA50T65SHD |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 100A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22.4ns/73.6ns
Switching Energy: 1.28mJ (on), 384µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 87 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 319 W
Description: IGBT TRENCH FS 650V 100A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22.4ns/73.6ns
Switching Energy: 1.28mJ (on), 384µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 87 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 319 W
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.6 EUR |