FGAF20N60SMD Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 314 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 147+ | 3.17 EUR |
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Technische Details FGAF20N60SMD Fairchild Semiconductor
Description: IGBT FIELD STOP 600V 40A TO-3PF, Packaging: Tube, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 26.7 ns, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A, Supplier Device Package: TO-3PF, IGBT Type: Field Stop, Td (on/off) @ 25°C: 12ns/91ns, Switching Energy: 452µJ (on), 141µJ (off), Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 64 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 75 W.
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FGAF20N60SMD | Hersteller : onsemi / Fairchild |
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auf Bestellung 302 Stücke: Lieferzeit 10-14 Tag (e) |
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FGAF20N60SMD | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 600V 40A 75000mW 3-Pin(3+Tab) TO-3PF Tube |
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| FGAF20N60SMD | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 600V 40A 75mW 3-Pin(3+Tab) TO-3PF Tube |
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FGAF20N60SMD | Hersteller : onsemi |
Description: IGBT FIELD STOP 600V 40A TO-3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 26.7 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A Supplier Device Package: TO-3PF IGBT Type: Field Stop Td (on/off) @ 25°C: 12ns/91ns Switching Energy: 452µJ (on), 141µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 64 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 75 W |
Produkt ist nicht verfügbar |