FGL12040WD ON Semiconductor / Fairchild
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Technische Details FGL12040WD ON Semiconductor / Fairchild
Description: IGBT TRENCH/FS 1200V 80A TO264-3, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 71 ns, Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A, Supplier Device Package: TO-264-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 45ns/560ns, Switching Energy: 4.1mJ (on), 1mJ (off), Test Condition: 600V, 40A, 23Ohm, 15V, Gate Charge: 226 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 391 W.
Weitere Produktangebote FGL12040WD
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FGL12040WD Produktcode: 166540 |
 Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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FGL12040WD | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 80A 391000mW 3-Pin(3+Tab) TO-264 Tube |
Produkt ist nicht verfügbar |
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FGL12040WD | Hersteller : onsemi |
Description: IGBT TRENCH/FS 1200V 80A TO264-3 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 71 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A Supplier Device Package: TO-264-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 45ns/560ns Switching Energy: 4.1mJ (on), 1mJ (off) Test Condition: 600V, 40A, 23Ohm, 15V Gate Charge: 226 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 391 W |
Produkt ist nicht verfügbar |