Produkte > FAIRCHILD SEMICONDUCTOR > FJN4303RTA
FJN4303RTA

FJN4303RTA Fairchild Semiconductor

FAIR-S-A0001356187-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: TRANS PREBIAS PNP 50V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 101186 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11539+0.074 EUR
Mindestbestellmenge: 11539
Produktrezensionen
Produktbewertung abgeben

Technische Details FJN4303RTA Fairchild Semiconductor

Description: TRANS PREBIAS PNP 50V TO92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 300 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms.

Weitere Produktangebote FJN4303RTA

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FJN4303RTA FJN4303RTA Hersteller : ON Semiconductor / Fairchild FJN4303R-1306062.pdf Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial
auf Bestellung 1631 Stücke:
Lieferzeit 14-28 Tag (e)