FMG1G75US60L Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: IGBT, 75A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: 7PM-GA
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: 7PM-GA
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 310 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 7.056 nF @ 30 V
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 62.81 EUR |
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Technische Details FMG1G75US60L Fairchild Semiconductor
Description: IGBT MODULE 600V 75A 310W 7PMGA, Packaging: Bulk, Package / Case: 7PM-GA, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 75A, NTC Thermistor: No, Supplier Device Package: 7PM-GA, Part Status: Obsolete, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 310 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 7.056 nF @ 30 V.
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| FMG1G75US60L | Hersteller : MITSUBISHI |
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| FMG1G75US60L | Hersteller : FAIRCHILD |
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| FMG1G75US60L | Hersteller : ONSEMI |
Description: ONSEMI - FMG1G75US60L - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 52 Stücke: Lieferzeit 14-21 Tag (e) |
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FMG1G75US60L | Hersteller : onsemi |
Description: IGBT MODULE 600V 75A 310W 7PMGA Packaging: Bulk Package / Case: 7PM-GA Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 75A NTC Thermistor: No Supplier Device Package: 7PM-GA Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 310 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 7.056 nF @ 30 V |
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