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FQAF15N70

FQAF15N70 Fairchild Semiconductor

FAIRS42351-1.pdf?t.download=true&u=5oefqw
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 700V 9.5A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
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Anzahl Preis
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Technische Details FQAF15N70 Fairchild Semiconductor

Description: MOSFET N-CH 700V 9.5A TO3PF, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Drain to Source Voltage (Vdss): 700 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-3PF, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 120W (Tc), Rds On (Max) @ Id, Vgs: 560mOhm @ 4.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3 Full Pack, Packaging: Tube.

Weitere Produktangebote FQAF15N70

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FQAF15N70 FQAF15N70 onsemi FQAF15N70.pdf Description: MOSFET N-CH 700V 9.5A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4.8A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Produkt ist nicht verfügbar
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FQAF15N70 FQAF15N70 ON Semiconductor / Fairchild FAIRS42351-1.pdf?t.download=true&u=5oefqw FQAF15N70.pdf MOSFET 700V N-Channel QFET
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FQAF15N70 FQAF15N70.pdf
FQAF15N70
Hersteller: onsemi
Description: MOSFET N-CH 700V 9.5A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4.8A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Produkt ist nicht verfügbar
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FQAF15N70 FAIRS42351-1.pdf?t.download=true&u=5oefqw FQAF15N70.pdf
FQAF15N70
Hersteller: ON Semiconductor / Fairchild
MOSFET 700V N-Channel QFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH