FQB20N06LTM onsemi
Hersteller: onsemi
Description: MOSFET N-CH 60V 21A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 53W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Technische Details FQB20N06LTM onsemi
Description: MOSFET N-CH 60V 21A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Obsolete, Supplier Device Package: D²PAK (TO-263), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.75W (Ta), 53W (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 10.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote FQB20N06LTM
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FQB20N06LTM | Fairchild Semiconductor |
Description: MOSFET N-CH 60V 21A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK (TO-263) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.75W (Ta), 53W (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 10.5A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FQB20N06LTM |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 60V 21A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK (TO-263)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 53W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Description: MOSFET N-CH 60V 21A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK (TO-263)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 53W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH