FQB3N60CTM Fairchild Semiconductor

Description: MOSFET N-CH 600V 3A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 75W (Tc), Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Bulk.