FQB9N50CFTM ON Semiconductor
| Anzahl | Preis |
|---|---|
| 246+ | 2.23 EUR |
| 500+ | 1.98 EUR |
| 1000+ | 1.78 EUR |
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Technische Details FQB9N50CFTM ON Semiconductor
Description: MOSFET N-CH 500V 9A D2PAK, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V, Power Dissipation (Max): 173W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V.
Weitere Produktangebote FQB9N50CFTM nach Preis ab 1.78 EUR bis 2.27 EUR
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FQB9N50CFTM | ON Semiconductor |
 Trans MOSFET N-CH 500V 9A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 8449 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB9N50CFTM | Fairchild Semiconductor |
Description: MOSFET N-CH 500V 9A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V Power Dissipation (Max): 173W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V |
auf Bestellung 9738 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQB9N50CFTM | FAIRCHIL.. |
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auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FQB9N50CFTM |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 500V 9A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 500V 9A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 8449 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 246+ | 2.23 EUR |
| 500+ | 1.98 EUR |
| 1000+ | 1.78 EUR |
| FQB9N50CFTM |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 9A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 173W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Description: MOSFET N-CH 500V 9A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 173W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
auf Bestellung 9738 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 197+ | 2.27 EUR |
| FQB9N50CFTM |
|
Hersteller: FAIRCHIL..
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)