FQD8N25TF Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 250V 6.2A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
| Anzahl | Preis |
|---|---|
| 413+ | 1.11 EUR |
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Technische Details FQD8N25TF Fairchild Semiconductor
Description: MOSFET N-CH 250V 6.2A DPAK, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 3.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Weitere Produktangebote FQD8N25TF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FQD8N25TF | onsemi |
Description: MOSFET N-CH 250V 6.2A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 3.1A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FQD8N25TF |
|
Hersteller: onsemi
Description: MOSFET N-CH 250V 6.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Description: MOSFET N-CH 250V 6.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH