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FQI4N90TU

FQI4N90TU Fairchild Semiconductor

fqi4n90-d.pdf
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 4
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 1302 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
173+2.64 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FQI4N90TU Fairchild Semiconductor

Description: POWER FIELD-EFFECT TRANSISTOR, 4, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc), Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V, Power Dissipation (Max): 3.13W (Ta), 140W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: I2PAK (TO-262), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.

Weitere Produktangebote FQI4N90TU nach Preis ab 2.64 EUR bis 2.64 EUR

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FQI4N90TU FQI4N90TU onsemi FQI4N90-D.pdf Description: MOSFET N-CH 900V 4.2A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 3792 Stücke:
Lieferzeit 10-14 Tag (e)
173+2.64 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
FQI4N90TU Fairchild fqi4n90-d.pdf FQI4N90-D.pdf
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FQI4N90TU FQI4N90-D.pdf
FQI4N90TU
Hersteller: onsemi
Description: MOSFET N-CH 900V 4.2A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 3792 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
173+2.64 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
FQI4N90TU fqi4n90-d.pdf FQI4N90-D.pdf
Hersteller: Fairchild
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH