FQP17N08L Fairchild Semiconductor

Description: MOSFET N-CH 80V 16.5A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 5 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 65W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 8.25A, 10V, Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.