FQP18N50V2 Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET N-CH 500V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 532 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 60+ | 7.5 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FQP18N50V2 Fairchild Semiconductor
Description: MOSFET N-CH 500V 18A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V.
Weitere Produktangebote FQP18N50V2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| FQP18N50V2 | Hersteller : FAIRCHILD |
|
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
||
 |
FQP18N50V2 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220 Rail |
Produkt ist nicht verfügbar |
|
 |
FQP18N50V2 | Hersteller : onsemi / Fairchild |
MOSFET 500V N-Ch QFET V2 Series |
Produkt ist nicht verfügbar |