Technische Details FQP2P40_F080 Fairchild Semiconductor
Description: MOSFET P-CH 400V 2A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 400 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 63W (Tc), Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote FQP2P40_F080
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FQP2P40-F080 | Hersteller : onsemi / Fairchild |
 MOSFET QF -400V 6.5OHM TO220 |
auf Bestellung 1913 Stücke: Lieferzeit 10-14 Tag (e) |
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FQP2P40-F080 | Hersteller : onsemi |
Description: MOSFET P-CH 400V 2A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
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