FQPF18N20V2YDTU ON Semiconductor
| Anzahl | Preis |
|---|---|
| 248+ | 2.19 EUR |
| 500+ | 1.9 EUR |
| 1000+ | 1.68 EUR |
| 10000+ | 1.44 EUR |
| 100000+ | 1.16 EUR |
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Technische Details FQPF18N20V2YDTU ON Semiconductor
Description: MOSFET N-CH 200V 18A TO220F-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 9A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3 (Y-Forming), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V.
Weitere Produktangebote FQPF18N20V2YDTU nach Preis ab 2.26 EUR bis 2.26 EUR
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FQPF18N20V2YDTU | Hersteller : Fairchild Semiconductor |
 Description: MOSFET N-CH 200V 18A TO220F-3Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 9A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V |
auf Bestellung 102400 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQPF18N20V2YDTU | Hersteller : ONSEMI |
Description: ONSEMI - FQPF18N20V2YDTU - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 84800 Stücke: Lieferzeit 14-21 Tag (e) |