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FQPF34N20L

FQPF34N20L Fairchild Semiconductor

FAIRS08497-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 200V 17.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 8.75A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 764 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
243+2.98 EUR
Mindestbestellmenge: 243
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Technische Details FQPF34N20L Fairchild Semiconductor

Description: MOSFET N-CH 200V 17.5A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 8.75A, 10V, Power Dissipation (Max): 55W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V.

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FQPF34N20L Hersteller : ONSEMI FAIRS08497-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - FQPF34N20L - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 764 Stücke:
Lieferzeit 14-21 Tag (e)
FQPF34N20L FQPF34N20L Hersteller : onsemi FQPF34N20L.pdf Description: MOSFET N-CH 200V 17.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 8.75A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
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