FQPF34N20L Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 200V 17.5A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 8.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 243+ | 2.09 EUR |
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Technische Details FQPF34N20L Fairchild Semiconductor
Description: MOSFET N-CH 200V 17.5A TO220F, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: TO-220F-3, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 55W (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 8.75A, 10V, Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.