FQPF6N40CT Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 400V 6A TO220F
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
| Anzahl | Preis |
|---|---|
| 680+ | 0.93 EUR |
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Technische Details FQPF6N40CT Fairchild Semiconductor
Description: MOSFET N-CH 400V 6A TO220F, Drain to Source Voltage (Vdss): 400 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220F-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 38W (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V.
Weitere Produktangebote FQPF6N40CT nach Preis ab 1.08 EUR bis 1.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| FQPF6N40CT | ON Semiconductor |
FQPF6N40CT |
auf Bestellung 680 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQPF6N40CT |
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Hersteller: ON Semiconductor
FQPF6N40CT
FQPF6N40CT
auf Bestellung 680 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 446+ | 1.22 EUR |
| 500+ | 1.08 EUR |
