FQU9N25TU Fairchild Semiconductor

Description: POWER FIELD-EFFECT TRANSISTOR, 7, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 55W (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Bulk.