FR12D02 GeneSiC Semiconductor

Description: DIODE GEN PURP 200V 12A DO4, Current - Reverse Leakage @ Vr: 25 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: DO-4, Current - Average Rectified (Io): 12A, Technology: Standard, Reverse Recovery Time (trr): 200 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis, Stud Mount, Package / Case: DO-203AA, DO-4, Stud, Packaging: Bulk.