GA05JT12-263 GeneSiC Semiconductor
Hersteller: GeneSiC SemiconductorDescription: TRANS SJT 1200V 15A D2PAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Power Dissipation (Max): 106W (Tc)
Supplier Device Package: TO-263-7
Drain to Source Voltage (Vdss): 1200 V
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Technische Details GA05JT12-263 GeneSiC Semiconductor
Description: TRANS SJT 1200V 15A D2PAK, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Power Dissipation (Max): 106W (Tc), Supplier Device Package: TO-263-7, Drain to Source Voltage (Vdss): 1200 V.
Weitere Produktangebote GA05JT12-263
| Foto | Bezeichnung | Hersteller | Beschreibung |
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GA05JT12-263 | Hersteller : GeneSiC Semiconductor |
JFET 1200V 15A Standard |
Produkt ist nicht verfügbar |